| • Wide Band Gap Gallium Nitride (GaN) power stage and planar magnetics | | • Wide Band Gap Gallium Nitride (GaN) power stage and planar magnetics |
- | • 1x2.3 inch high power density design (TEP45F, 65F) • 45W and 65W interoperable footprint |
+ | • 1x1.5 inch (TEP10F, 20F), 1x2.3 (TEP45F, 65F) inch high power density design • 10W - 20W, 45W - 65W interoperable footprint |
| • High efficiency up to 93.5% | | • High efficiency up to 93.5% |
| • PCB mount and dust protective case | | • PCB mount and dust protective case |
| • Class Ⅱ: No FG connection is necessary | | • Class Ⅱ: No FG connection is necessary |
| • 140% peak power available by -H option at 12V and 24V models | | • 140% peak power available by -H option at 12V and 24V models |